• Request For Comment

    From amal banerjee@21:1/5 to All on Wed Aug 3 04:18:37 2022
    Dear All,

    I am planning on writing and publishing a lecture notes style reference book
    on ALL homogeneous and heterogeneous junction semiconductor devices.
    The list includes BJTs, FETs, MOSFETs, HBTs, HEMTs, LEDs, Solar cells,
    VCSELs etc. The main reason for writing this book are :
    1, Very few(miniscule) of the available books have any material on heterogeneous junction devices.
    2. Available books fall short on the key details - e.g., the sequence of steps involved in creating the crucial energy band diagrams when e,g., two isolated oppositely doped semiconductors are brought in contact.
    3. Some semiconductor device books are written by physicists who overlook
    large signal models and equivalent circuit models. Other books written by
    pure electronics people ignore the key quamtum or statistical mechanics that govern semiconductor device operation. No mention of the large signal Angelovc models for HDTs, HEMTS.

    A tentative list of topics is as follow - it will be expanded.

    A Fundamental Quantum and Statistical Mechanics of Crystalline Solids
    -Energy Bands
    -Physics of Energy Bands
    -Material Classification Using Quantum States
    -Crystal Structure and Semiconductor Energy Bands
    -Crystal Momentum, Effective Mass, Negative Effective Mass
    -Effective Mass Schrodinger’s Wave Equation
    -Electron Excitation(Chemical, Electrical, Optical, Thermal) From Valence to Conduction Band – Hole Creation
    -Recombination(Band-Band, Auger) and Recombination Lifetime
    -Carrier Concentrations
    -Thermal Equilibrium and Fermi Dirac Statistics
    -Collisions and Scattering
    -Fermi Dirac Statistics and Fermi Level, Equilibrium Carrier Concentration

    B. Charge Transport(Current Flow) in Semiconductors
    -General Concepts
    -Relation between Charge, Current and Energy
    -Boltzmann Transport Equation
    -Method of Moments Solution of Boltzmann's Equation
    -Drift-Diffusion Equations
    -Hydrodynamic Transport Equations
    -Semiconductor Device Design Equations
    -Conductivity Electron, Hole Effective Masses
    -Drift=Diffusion and Thermal Currents
    -Ballistic Transport of Charge Carriers

    C. Homo|Heterogeneous Semiconductor Junction(np|Np) Fundamentals
    -Homogeneous np Semiconductor Junction
    -Homogeneous np Junction with External Bias
    -Quasi Fermi Levels
    -Heterogeneous Semiconductor Junctions Np and Pn
    -Heterogeneous Semiconductor Junction Quasi Fermi Level Splitting

    D. Basic Heterogeneous Bipolar|Bijunction Transistor(HBT)
    -Types of Heterogeneous Bipolar Transistor and Characteristics
    -The Collector and Base Current of a HBT
    -Emitter Hole Current in a HBT
    -Simple DC Equivalent Circuit Model for Heterogeneous Transistor(HBT)

    E. Advanced VBIC, Non-VBIC Heterogeneous Bipolar|
    Bijunction Transistor(HBT) - Large Signal Models
    - Parameters - Equivalent Electrical Circuits
    -The VBIC Model Specification
    -VBIC Homogeneous Junction Bipolar Transistor
    -VBIC Heterogeneous Junction Bipolar Transistor
    -Non-VBIC Heterogeneous Junction Bipolar Transistor

    F. Basic High Electron Mobility Transistor(HEMT)
    -Metal-Semiconductor Junction, Schottky Diode, Ohmic and Rectifying Junction -Metal-Semiconductor Field Effect Transistor - Drain Curremt
    -High Electron Mobility Transistor(HEMT) - Potential Wells, Undoped Layer Two Dimensional Electron Gas(2DEG) and Properties

    All hints, suggestions recommendations are welcome. Thanks in advance.

    --- SoupGate-Win32 v1.05
    * Origin: fsxNet Usenet Gateway (21:1/5)
  • From Phil Hobbs@21:1/5 to amal banerjee on Wed Aug 3 08:09:11 2022
    amal banerjee wrote:
    Dear All,

    I am planning on writing and publishing a lecture notes style reference book on ALL homogeneous and heterogeneous junction semiconductor devices.
    The list includes BJTs, FETs, MOSFETs, HBTs, HEMTs, LEDs, Solar cells,
    VCSELs etc. The main reason for writing this book are :
    1, Very few(miniscule) of the available books have any material on heterogeneous junction devices.
    2. Available books fall short on the key details - e.g., the sequence of steps
    involved in creating the crucial energy band diagrams when e,g., two isolated oppositely doped semiconductors are brought in contact.
    3. Some semiconductor device books are written by physicists who overlook large signal models and equivalent circuit models. Other books written by pure electronics people ignore the key quamtum or statistical mechanics that govern semiconductor device operation. No mention of the large signal Angelovc models for HDTs, HEMTS.

    A tentative list of topics is as follow - it will be expanded.

    A Fundamental Quantum and Statistical Mechanics of Crystalline Solids
    -Energy Bands
    -Physics of Energy Bands
    -Material Classification Using Quantum States
    -Crystal Structure and Semiconductor Energy Bands
    -Crystal Momentum, Effective Mass, Negative Effective Mass
    -Effective Mass Schrodinger’s Wave Equation
    -Electron Excitation(Chemical, Electrical, Optical, Thermal) From Valence to Conduction Band – Hole Creation
    -Recombination(Band-Band, Auger) and Recombination Lifetime
    -Carrier Concentrations
    -Thermal Equilibrium and Fermi Dirac Statistics
    -Collisions and Scattering
    -Fermi Dirac Statistics and Fermi Level, Equilibrium Carrier Concentration

    B. Charge Transport(Current Flow) in Semiconductors
    -General Concepts
    -Relation between Charge, Current and Energy
    -Boltzmann Transport Equation
    -Method of Moments Solution of Boltzmann's Equation
    -Drift-Diffusion Equations
    -Hydrodynamic Transport Equations
    -Semiconductor Device Design Equations
    -Conductivity Electron, Hole Effective Masses
    -Drift=Diffusion and Thermal Currents
    -Ballistic Transport of Charge Carriers

    C. Homo|Heterogeneous Semiconductor Junction(np|Np) Fundamentals
    -Homogeneous np Semiconductor Junction
    -Homogeneous np Junction with External Bias
    -Quasi Fermi Levels
    -Heterogeneous Semiconductor Junctions Np and Pn
    -Heterogeneous Semiconductor Junction Quasi Fermi Level Splitting

    D. Basic Heterogeneous Bipolar|Bijunction Transistor(HBT)
    -Types of Heterogeneous Bipolar Transistor and Characteristics
    -The Collector and Base Current of a HBT
    -Emitter Hole Current in a HBT
    -Simple DC Equivalent Circuit Model for Heterogeneous Transistor(HBT)

    E. Advanced VBIC, Non-VBIC Heterogeneous Bipolar|
    Bijunction Transistor(HBT) - Large Signal Models
    - Parameters - Equivalent Electrical Circuits
    -The VBIC Model Specification
    -VBIC Homogeneous Junction Bipolar Transistor
    -VBIC Heterogeneous Junction Bipolar Transistor
    -Non-VBIC Heterogeneous Junction Bipolar Transistor

    F. Basic High Electron Mobility Transistor(HEMT)
    -Metal-Semiconductor Junction, Schottky Diode, Ohmic and Rectifying Junction -Metal-Semiconductor Field Effect Transistor - Drain Curremt
    -High Electron Mobility Transistor(HEMT) - Potential Wells, Undoped Layer Two Dimensional Electron Gas(2DEG) and Properties

    All hints, suggestions recommendations are welcome. Thanks in advance.

    Sounds like quite the tome!

    You don't seem to be planning to cover normal devices much--most current-technology s/c devices are somewhere in the gap between sections
    C and D. I'm personally a big user of pHEMTs and SiGe HBTs, but there
    are lots of other things out there, such as CMOS and flash EEPROM.
    That's not intended as a criticism, but it may restrict your market some.

    Things I'd like to read about:

    Device design, including process limitations, e.g. planar vs. epitaxial
    vs. HBT bipolars and FETs (A lot of low-noise design is limited by the
    Johnson noise of various extrinsic resistances, for instance.)

    Tradeoffs between breakdown voltage, speed, Early voltage, and so on,
    and how HBTs and graded-composition designs can help. Normal RF
    transistors have terrible Early voltages, but graded-base SiGe ones can
    be amazing.

    Large-signal behaviour of HBTs, e.g. what happens when you forward-bias
    the gate of a pHEMT. (JL and I have a few tricks to share in that area.)

    In general I'd suggest thinking fairly carefully about who your audience
    is. I've been out of academia for 35 years, myself, but BITD folks who
    were interested in a deep dive into heterojunctions, 2-d electron gas
    devices, and that sort of thing probably knew some quantum mechanics and semiconductor theory already.

    Good luck with it--it sounds like a noble endeavour.

    Cheers

    Phil Hobbs

    --
    Dr Philip C D Hobbs
    Principal Consultant
    ElectroOptical Innovations LLC / Hobbs ElectroOptics
    Optics, Electro-optics, Photonics, Analog Electronics
    Briarcliff Manor NY 10510

    http://electrooptical.net
    http://hobbs-eo.com

    --- SoupGate-Win32 v1.05
    * Origin: fsxNet Usenet Gateway (21:1/5)
  • From jlarkin@highlandsniptechnology.com@21:1/5 to pcdhSpamMeSenseless@electrooptical. on Wed Aug 3 07:28:52 2022
    On Wed, 3 Aug 2022 08:09:11 -0400, Phil Hobbs <pcdhSpamMeSenseless@electrooptical.net> wrote:

    amal banerjee wrote:
    Dear All,

    I am planning on writing and publishing a lecture notes style reference book >> on ALL homogeneous and heterogeneous junction semiconductor devices.
    The list includes BJTs, FETs, MOSFETs, HBTs, HEMTs, LEDs, Solar cells,
    VCSELs etc. The main reason for writing this book are :
    1, Very few(miniscule) of the available books have any material on
    heterogeneous junction devices.
    2. Available books fall short on the key details - e.g., the sequence of steps
    involved in creating the crucial energy band diagrams when e,g., two isolated
    oppositely doped semiconductors are brought in contact.
    3. Some semiconductor device books are written by physicists who overlook
    large signal models and equivalent circuit models. Other books written by
    pure electronics people ignore the key quamtum or statistical mechanics that govern semiconductor device operation. No mention of the large signal Angelovc models for HDTs, HEMTS.

    A tentative list of topics is as follow - it will be expanded.

    A Fundamental Quantum and Statistical Mechanics of Crystalline Solids
    -Energy Bands
    -Physics of Energy Bands
    -Material Classification Using Quantum States
    -Crystal Structure and Semiconductor Energy Bands
    -Crystal Momentum, Effective Mass, Negative Effective Mass
    -Effective Mass Schrodingers Wave Equation
    -Electron Excitation(Chemical, Electrical, Optical, Thermal) From Valence to Conduction Band Hole Creation
    -Recombination(Band-Band, Auger) and Recombination Lifetime
    -Carrier Concentrations
    -Thermal Equilibrium and Fermi Dirac Statistics
    -Collisions and Scattering
    -Fermi Dirac Statistics and Fermi Level, Equilibrium Carrier Concentration >>
    B. Charge Transport(Current Flow) in Semiconductors
    -General Concepts
    -Relation between Charge, Current and Energy
    -Boltzmann Transport Equation
    -Method of Moments Solution of Boltzmann's Equation
    -Drift-Diffusion Equations
    -Hydrodynamic Transport Equations
    -Semiconductor Device Design Equations
    -Conductivity Electron, Hole Effective Masses
    -Drift=Diffusion and Thermal Currents
    -Ballistic Transport of Charge Carriers

    C. Homo|Heterogeneous Semiconductor Junction(np|Np) Fundamentals
    -Homogeneous np Semiconductor Junction
    -Homogeneous np Junction with External Bias
    -Quasi Fermi Levels
    -Heterogeneous Semiconductor Junctions Np and Pn
    -Heterogeneous Semiconductor Junction Quasi Fermi Level Splitting

    D. Basic Heterogeneous Bipolar|Bijunction Transistor(HBT)
    -Types of Heterogeneous Bipolar Transistor and Characteristics
    -The Collector and Base Current of a HBT
    -Emitter Hole Current in a HBT
    -Simple DC Equivalent Circuit Model for Heterogeneous Transistor(HBT)

    E. Advanced VBIC, Non-VBIC Heterogeneous Bipolar|
    Bijunction Transistor(HBT) - Large Signal Models
    - Parameters - Equivalent Electrical Circuits
    -The VBIC Model Specification
    -VBIC Homogeneous Junction Bipolar Transistor
    -VBIC Heterogeneous Junction Bipolar Transistor
    -Non-VBIC Heterogeneous Junction Bipolar Transistor

    F. Basic High Electron Mobility Transistor(HEMT)
    -Metal-Semiconductor Junction, Schottky Diode, Ohmic and Rectifying Junction
    -Metal-Semiconductor Field Effect Transistor - Drain Curremt
    -High Electron Mobility Transistor(HEMT) - Potential Wells, Undoped Layer Two Dimensional Electron Gas(2DEG) and Properties

    All hints, suggestions recommendations are welcome. Thanks in advance.

    Sounds like quite the tome!

    You don't seem to be planning to cover normal devices much--most >current-technology s/c devices are somewhere in the gap between sections
    C and D. I'm personally a big user of pHEMTs and SiGe HBTs, but there
    are lots of other things out there, such as CMOS and flash EEPROM.
    That's not intended as a criticism, but it may restrict your market some.

    Things I'd like to read about:

    Device design, including process limitations, e.g. planar vs. epitaxial
    vs. HBT bipolars and FETs (A lot of low-noise design is limited by the >Johnson noise of various extrinsic resistances, for instance.)

    Tradeoffs between breakdown voltage, speed, Early voltage, and so on,
    and how HBTs and graded-composition designs can help. Normal RF
    transistors have terrible Early voltages, but graded-base SiGe ones can
    be amazing.

    Large-signal behaviour of HBTs, e.g. what happens when you forward-bias
    the gate of a pHEMT. (JL and I have a few tricks to share in that area.)

    As a circuit designer, I don't know or care much about semiconductor
    physics except where it provides hints to possible undocumented device behavior, which I can measure and see if it's useful.

    So, such a book should include practical stuff, like the voltage-current-capacitance curves of a part that has typical physics.
    In other words, fill a few pages with equations, then specify a
    specific case, and describe the device in datasheet terms.

    I measure phemts and GaN and SiC for undocumented behavior, like use
    as a diode, or step recovery, or Rds-on, and discover useful stuff. If
    a book has practical stuff, working engineers might buy it.

    Device degradation and damage are important topics but actively
    ignored by the part makers.

    I have (somebody's) book about microwave PCBs, microstrip and
    stripline and such. Some of the cases are pages of equations and pages
    of equations inside of equations. Totally useless.



    In general I'd suggest thinking fairly carefully about who your audience
    is. I've been out of academia for 35 years, myself, but BITD folks who
    were interested in a deep dive into heterojunctions, 2-d electron gas >devices, and that sort of thing probably knew some quantum mechanics and >semiconductor theory already.

    Good luck with it--it sounds like a noble endeavour.

    Cheers

    Phil Hobbs

    --- SoupGate-Win32 v1.05
    * Origin: fsxNet Usenet Gateway (21:1/5)
  • From John May@21:1/5 to daku...@gmail.com on Thu Aug 4 03:10:28 2022
    On Wednesday, August 3, 2022 at 12:18:40 PM UTC+1, daku...@gmail.com wrote:
    Dear All,

    I am planning on writing and publishing a lecture notes style reference book on ALL homogeneous and heterogeneous junction semiconductor devices.
    The list includes BJTs, FETs, MOSFETs, HBTs, HEMTs, LEDs, Solar cells, VCSELs etc. The main reason for writing this book are :
    1, Very few(miniscule) of the available books have any material on heterogeneous junction devices.
    2. Available books fall short on the key details - e.g., the sequence of steps
    involved in creating the crucial energy band diagrams when e,g., two isolated
    oppositely doped semiconductors are brought in contact.
    3. Some semiconductor device books are written by physicists who overlook large signal models and equivalent circuit models. Other books written by pure electronics people ignore the key quamtum or statistical mechanics that govern semiconductor device operation. No mention of the large signal Angelovc models for HDTs, HEMTS.

    A tentative list of topics is as follow - it will be expanded.

    A Fundamental Quantum and Statistical Mechanics of Crystalline Solids -Energy Bands
    -Physics of Energy Bands
    -Material Classification Using Quantum States
    -Crystal Structure and Semiconductor Energy Bands
    -Crystal Momentum, Effective Mass, Negative Effective Mass
    -Effective Mass Schrodinger’s Wave Equation
    -Electron Excitation(Chemical, Electrical, Optical, Thermal) From Valence to Conduction Band – Hole Creation
    -Recombination(Band-Band, Auger) and Recombination Lifetime
    -Carrier Concentrations
    -Thermal Equilibrium and Fermi Dirac Statistics
    -Collisions and Scattering
    -Fermi Dirac Statistics and Fermi Level, Equilibrium Carrier Concentration

    B. Charge Transport(Current Flow) in Semiconductors
    -General Concepts
    -Relation between Charge, Current and Energy
    -Boltzmann Transport Equation
    -Method of Moments Solution of Boltzmann's Equation
    -Drift-Diffusion Equations
    -Hydrodynamic Transport Equations
    -Semiconductor Device Design Equations
    -Conductivity Electron, Hole Effective Masses
    -Drift=Diffusion and Thermal Currents
    -Ballistic Transport of Charge Carriers

    C. Homo|Heterogeneous Semiconductor Junction(np|Np) Fundamentals -Homogeneous np Semiconductor Junction
    -Homogeneous np Junction with External Bias
    -Quasi Fermi Levels
    -Heterogeneous Semiconductor Junctions Np and Pn
    -Heterogeneous Semiconductor Junction Quasi Fermi Level Splitting

    D. Basic Heterogeneous Bipolar|Bijunction Transistor(HBT)
    -Types of Heterogeneous Bipolar Transistor and Characteristics
    -The Collector and Base Current of a HBT
    -Emitter Hole Current in a HBT
    -Simple DC Equivalent Circuit Model for Heterogeneous Transistor(HBT)

    E. Advanced VBIC, Non-VBIC Heterogeneous Bipolar|
    Bijunction Transistor(HBT) - Large Signal Models
    - Parameters - Equivalent Electrical Circuits
    -The VBIC Model Specification
    -VBIC Homogeneous Junction Bipolar Transistor
    -VBIC Heterogeneous Junction Bipolar Transistor
    -Non-VBIC Heterogeneous Junction Bipolar Transistor

    F. Basic High Electron Mobility Transistor(HEMT)
    -Metal-Semiconductor Junction, Schottky Diode, Ohmic and Rectifying Junction -Metal-Semiconductor Field Effect Transistor - Drain Curremt
    -High Electron Mobility Transistor(HEMT) - Potential Wells, Undoped Layer Two Dimensional Electron Gas(2DEG) and Properties

    All hints, suggestions recommendations are welcome. Thanks in advance.

    Possibly add a chapter on the design tools actually used in device design (TCAD, Sentaurus etc.). Or maybe utilise some of the resources at nanoHUB.

    --- SoupGate-Win32 v1.05
    * Origin: fsxNet Usenet Gateway (21:1/5)
  • From whit3rd@21:1/5 to daku...@gmail.com on Thu Aug 4 10:45:41 2022
    On Wednesday, August 3, 2022 at 4:18:40 AM UTC-7, daku...@gmail.com wrote:
    Dear All,

    I am planning on writing and publishing a lecture notes style reference book on ALL homogeneous and heterogeneous junction semiconductor devices.
    The list includes BJTs, FETs, MOSFETs, HBTs, HEMTs, LEDs, Solar cells,
    VCSELs etc. The main reason for writing this book are :
    1, Very few(miniscule) of the available books have any material on heterogeneous junction devices.
    2. Available books fall short on the key details - e.g., the sequence of steps
    involved in creating the crucial energy band diagrams when e,g., two isolated oppositely doped semiconductors are brought in contact.
    3. Some semiconductor device books are written by physicists who overlook large signal models and equivalent circuit models. Other books written by pure electronics people ignore the key quamtum or statistical mechanics that govern semiconductor device operation. No mention of the large signal Angelovc models for HDTs, HEMTS.


    This sounds too broad for a single book, alas.
    As for heterojunction and other devices not covered in the old Sze book's various editions

    <https://www.goodreads.com/book/show/382279.Semiconductor_Devices>

    It'd be useful, all right, but device-design and device-utilization issues are very
    different; a broad audience wants to know utilization, i.e. a set of model parameters for real devices, and that's info that changes often.

    The physics of heterojunctions is interesting, but to sell copies... maybe just a tiny
    book with those topics can be marketable, preferably with some SPICE or other support. A lecture note base has to prepare naiive students for the real world; that's too much info to casually read through, but a discussion of models and parameters for the novel devices is... a right-size information dose.

    --- SoupGate-Win32 v1.05
    * Origin: fsxNet Usenet Gateway (21:1/5)
  • From Joe Gwinn@21:1/5 to dakupoto@gmail.com on Thu Aug 4 15:31:32 2022
    On Wed, 3 Aug 2022 04:18:37 -0700 (PDT), amal banerjee
    <dakupoto@gmail.com> wrote:

    Dear All,

    I am planning on writing and publishing a lecture notes style reference book >on ALL homogeneous and heterogeneous junction semiconductor devices.
    The list includes BJTs, FETs, MOSFETs, HBTs, HEMTs, LEDs, Solar cells,
    VCSELs etc. The main reason for writing this book are :
    1, Very few(miniscule) of the available books have any material on >heterogeneous junction devices.
    2. Available books fall short on the key details - e.g., the sequence of steps >involved in creating the crucial energy band diagrams when e,g., two isolated >oppositely doped semiconductors are brought in contact.
    3. Some semiconductor device books are written by physicists who overlook >large signal models and equivalent circuit models. Other books written by >pure electronics people ignore the key quamtum or statistical mechanics that govern semiconductor device operation. No mention of the large signal Angelovc models for HDTs, HEMTS.

    A tentative list of topics is as follow - it will be expanded.

    [snip]

    C. Homo|Heterogeneous Semiconductor Junction(np|Np) Fundamentals
    -Homogeneous np Semiconductor Junction
    -Homogeneous np Junction with External Bias
    -Quasi Fermi Levels
    -Heterogeneous Semiconductor Junctions Np and Pn
    -Heterogeneous Semiconductor Junction Quasi Fermi Level Splitting

    D. Basic Heterogeneous Bipolar|Bijunction Transistor(HBT)
    -Types of Heterogeneous Bipolar Transistor and Characteristics
    -The Collector and Base Current of a HBT
    -Emitter Hole Current in a HBT
    -Simple DC Equivalent Circuit Model for Heterogeneous Transistor(HBT)

    E. Advanced VBIC, Non-VBIC Heterogeneous Bipolar|
    Bijunction Transistor(HBT) - Large Signal Models
    - Parameters - Equivalent Electrical Circuits
    -The VBIC Model Specification
    -VBIC Homogeneous Junction Bipolar Transistor
    -VBIC Heterogeneous Junction Bipolar Transistor
    -Non-VBIC Heterogeneous Junction Bipolar Transistor

    F. Basic High Electron Mobility Transistor(HEMT)
    -Metal-Semiconductor Junction, Schottky Diode, Ohmic and Rectifying Junction >-Metal-Semiconductor Field Effect Transistor - Drain Curremt
    -High Electron Mobility Transistor(HEMT) - Potential Wells, Undoped Layer Two Dimensional Electron Gas(2DEG) and Properties

    All hints, suggestions recommendations are welcome. Thanks in advance.

    What is often missing is a discussion of what drives noise generation
    in the various transistor types. This kind of data is essential in
    many practical low-noise applications, and it's useful to know how the
    various transistor types compare, and how the noise scales with device
    details.

    There are two major kinds of noise to addressed, being flat-band (the
    noise floor), and flicker noise at low offset frequencies. These
    differ in their physical causes.

    Both current and voltage noise must be considered. Spurs are ignored
    here.

    The noise floor is typically Gaussian, and often arises from thermal
    and shot-noise sources.

    The sources of flicker noise are many and mostly unknown, but cleaner
    material and bigger device volume both reduce the flicker level.
    Flicker noise follows a sum of kn/f^n terms formula, where n is an
    integer from zero to three or four.

    One mistake one often sees is that the offset-frequency location where
    the Flicker noise curve crosses the noise floor is cited as defining
    the flicker noise. The problem is that variation in noise floor level
    will change this intersection, even though the flicker noise is
    unchanged, so it's best to tabulate the coefficients kn of the kn/f^n
    terms.

    Joe Gwinn

    --- SoupGate-Win32 v1.05
    * Origin: fsxNet Usenet Gateway (21:1/5)
  • From amal banerjee@21:1/5 to All on Mon Aug 8 04:12:20 2022
    On Thursday, August 4, 2022 at 11:15:45 PM UTC+5:30, whit3rd wrote:
    On Wednesday, August 3, 2022 at 4:18:40 AM UTC-7, daku...@gmail.com wrote:
    Dear All,

    I am planning on writing and publishing a lecture notes style reference book
    on ALL homogeneous and heterogeneous junction semiconductor devices.
    The list includes BJTs, FETs, MOSFETs, HBTs, HEMTs, LEDs, Solar cells, VCSELs etc. The main reason for writing this book are :
    1, Very few(miniscule) of the available books have any material on heterogeneous junction devices.
    2. Available books fall short on the key details - e.g., the sequence of steps
    involved in creating the crucial energy band diagrams when e,g., two isolated
    oppositely doped semiconductors are brought in contact.
    3. Some semiconductor device books are written by physicists who overlook large signal models and equivalent circuit models. Other books written by pure electronics people ignore the key quamtum or statistical mechanics that govern semiconductor device operation. No mention of the large signal Angelovc models for HDTs, HEMTS.
    This sounds too broad for a single book, alas.
    As for heterojunction and other devices not covered in the old Sze book's various editions

    <https://www.goodreads.com/book/show/382279.Semiconductor_Devices>

    It'd be useful, all right, but device-design and device-utilization issues are very
    different; a broad audience wants to know utilization, i.e. a set of model parameters for real devices, and that's info that changes often.

    The physics of heterojunctions is interesting, but to sell copies... maybe just a tiny
    book with those topics can be marketable, preferably with some SPICE or other support. A lecture note base has to prepare naiive students for the real world; that's too much info to casually read through, but a discussion of models and parameters for the novel devices is... a right-size information dose.
    Absolutely, there will be a detailed chapter on noise sources in these high performance
    devices and how they are being tackled, or proposed to being tackled. The physics is
    confined to the first two chapters only. Without a clear idea of how drift|diffusion work
    the reaser would be confused about how depletion regions form. Also, without any idea
    of Fermi levels and thermal equilibroum, it is difficult to digest band bending at junctions.

    --- SoupGate-Win32 v1.05
    * Origin: fsxNet Usenet Gateway (21:1/5)
  • From amal banerjee@21:1/5 to Phil Hobbs on Mon Aug 8 03:55:19 2022
    On Wednesday, August 3, 2022 at 5:39:22 PM UTC+5:30, Phil Hobbs wrote:
    amal banerjee wrote:
    Dear All,

    I am planning on writing and publishing a lecture notes style reference book
    on ALL homogeneous and heterogeneous junction semiconductor devices.
    The list includes BJTs, FETs, MOSFETs, HBTs, HEMTs, LEDs, Solar cells, VCSELs etc. The main reason for writing this book are :
    1, Very few(miniscule) of the available books have any material on heterogeneous junction devices.
    2. Available books fall short on the key details - e.g., the sequence of steps
    involved in creating the crucial energy band diagrams when e,g., two isolated
    oppositely doped semiconductors are brought in contact.
    3. Some semiconductor device books are written by physicists who overlook large signal models and equivalent circuit models. Other books written by pure electronics people ignore the key quamtum or statistical mechanics that govern semiconductor device operation. No mention of the large signal Angelovc models for HDTs, HEMTS.

    A tentative list of topics is as follow - it will be expanded.

    A Fundamental Quantum and Statistical Mechanics of Crystalline Solids -Energy Bands
    -Physics of Energy Bands
    -Material Classification Using Quantum States
    -Crystal Structure and Semiconductor Energy Bands
    -Crystal Momentum, Effective Mass, Negative Effective Mass
    -Effective Mass Schrodinger’s Wave Equation
    -Electron Excitation(Chemical, Electrical, Optical, Thermal) From Valence to Conduction Band – Hole Creation
    -Recombination(Band-Band, Auger) and Recombination Lifetime
    -Carrier Concentrations
    -Thermal Equilibrium and Fermi Dirac Statistics
    -Collisions and Scattering
    -Fermi Dirac Statistics and Fermi Level, Equilibrium Carrier Concentration

    B. Charge Transport(Current Flow) in Semiconductors
    -General Concepts
    -Relation between Charge, Current and Energy
    -Boltzmann Transport Equation
    -Method of Moments Solution of Boltzmann's Equation
    -Drift-Diffusion Equations
    -Hydrodynamic Transport Equations
    -Semiconductor Device Design Equations
    -Conductivity Electron, Hole Effective Masses
    -Drift=Diffusion and Thermal Currents
    -Ballistic Transport of Charge Carriers

    C. Homo|Heterogeneous Semiconductor Junction(np|Np) Fundamentals -Homogeneous np Semiconductor Junction
    -Homogeneous np Junction with External Bias
    -Quasi Fermi Levels
    -Heterogeneous Semiconductor Junctions Np and Pn
    -Heterogeneous Semiconductor Junction Quasi Fermi Level Splitting

    D. Basic Heterogeneous Bipolar|Bijunction Transistor(HBT)
    -Types of Heterogeneous Bipolar Transistor and Characteristics
    -The Collector and Base Current of a HBT
    -Emitter Hole Current in a HBT
    -Simple DC Equivalent Circuit Model for Heterogeneous Transistor(HBT)

    E. Advanced VBIC, Non-VBIC Heterogeneous Bipolar|
    Bijunction Transistor(HBT) - Large Signal Models
    - Parameters - Equivalent Electrical Circuits
    -The VBIC Model Specification
    -VBIC Homogeneous Junction Bipolar Transistor
    -VBIC Heterogeneous Junction Bipolar Transistor
    -Non-VBIC Heterogeneous Junction Bipolar Transistor

    F. Basic High Electron Mobility Transistor(HEMT)
    -Metal-Semiconductor Junction, Schottky Diode, Ohmic and Rectifying Junction
    -Metal-Semiconductor Field Effect Transistor - Drain Curremt
    -High Electron Mobility Transistor(HEMT) - Potential Wells, Undoped Layer Two Dimensional Electron Gas(2DEG) and Properties

    All hints, suggestions recommendations are welcome. Thanks in advance.
    Sounds like quite the tome!

    You don't seem to be planning to cover normal devices much--most current-technology s/c devices are somewhere in the gap between sections
    C and D. I'm personally a big user of pHEMTs and SiGe HBTs, but there
    are lots of other things out there, such as CMOS and flash EEPROM.
    That's not intended as a criticism, but it may restrict your market some.

    Things I'd like to read about:

    Device design, including process limitations, e.g. planar vs. epitaxial
    vs. HBT bipolars and FETs (A lot of low-noise design is limited by the Johnson noise of various extrinsic resistances, for instance.)

    Tradeoffs between breakdown voltage, speed, Early voltage, and so on,
    and how HBTs and graded-composition designs can help. Normal RF
    transistors have terrible Early voltages, but graded-base SiGe ones can
    be amazing.

    Large-signal behaviour of HBTs, e.g. what happens when you forward-bias
    the gate of a pHEMT. (JL and I have a few tricks to share in that area.)

    In general I'd suggest thinking fairly carefully about who your audience
    is. I've been out of academia for 35 years, myself, but BITD folks who
    were interested in a deep dive into heterojunctions, 2-d electron gas devices, and that sort of thing probably knew some quantum mechanics and semiconductor theory already.

    Good luck with it--it sounds like a noble endeavour.

    Cheers

    Phil Hobbs

    --
    Dr Philip C D Hobbs
    Principal Consultant
    ElectroOptical Innovations LLC / Hobbs ElectroOptics
    Optics, Electro-optics, Photonics, Analog Electronics
    Briarcliff Manor NY 10510

    http://electrooptical.net
    http://hobbs-eo.com

    Thanks for the detailed set of suggestions. I will definitely have short chapters on
    bipolar transistors and MOSFETs. The reason I have placed the heterojuncrion devices
    before the homogeneous devices is that a miniscule number of authors include these
    in there books. Most of the material on heterogeneous junctions is in conference|journal
    papers etc., which is good since the reader has access to the latest information.
    There will definitely be some chapters on how to design transistors for various applicarions
    -e.g., power FET as compared to high speed(as in a microprocessor) or high frequency
    (RF|microwave) application. Most definitely, there will be a detailed chapter on noise
    sources in these high performance devices. Quantum, statistical mechanics and crystal structure is nor an issue - my basic training is in physics.

    --- SoupGate-Win32 v1.05
    * Origin: fsxNet Usenet Gateway (21:1/5)
  • From amal banerjee@21:1/5 to jla...@highlandsniptechnology.com on Mon Aug 8 03:59:37 2022
    On Wednesday, August 3, 2022 at 7:59:03 PM UTC+5:30, jla...@highlandsniptechnology.com wrote:
    On Wed, 3 Aug 2022 08:09:11 -0400, Phil Hobbs <pcdhSpamM...@electrooptical.net> wrote:

    amal banerjee wrote:
    Dear All,

    I am planning on writing and publishing a lecture notes style reference book
    on ALL homogeneous and heterogeneous junction semiconductor devices.
    The list includes BJTs, FETs, MOSFETs, HBTs, HEMTs, LEDs, Solar cells,
    VCSELs etc. The main reason for writing this book are :
    1, Very few(miniscule) of the available books have any material on
    heterogeneous junction devices.
    2. Available books fall short on the key details - e.g., the sequence of steps
    involved in creating the crucial energy band diagrams when e,g., two isolated
    oppositely doped semiconductors are brought in contact.
    3. Some semiconductor device books are written by physicists who overlook >> large signal models and equivalent circuit models. Other books written by >> pure electronics people ignore the key quamtum or statistical mechanics that govern semiconductor device operation. No mention of the large signal Angelovc models for HDTs, HEMTS.

    A tentative list of topics is as follow - it will be expanded.

    A Fundamental Quantum and Statistical Mechanics of Crystalline Solids
    -Energy Bands
    -Physics of Energy Bands
    -Material Classification Using Quantum States
    -Crystal Structure and Semiconductor Energy Bands
    -Crystal Momentum, Effective Mass, Negative Effective Mass
    -Effective Mass Schrodinger’s Wave Equation
    -Electron Excitation(Chemical, Electrical, Optical, Thermal) From Valence to Conduction Band – Hole Creation
    -Recombination(Band-Band, Auger) and Recombination Lifetime
    -Carrier Concentrations
    -Thermal Equilibrium and Fermi Dirac Statistics
    -Collisions and Scattering
    -Fermi Dirac Statistics and Fermi Level, Equilibrium Carrier Concentration

    B. Charge Transport(Current Flow) in Semiconductors
    -General Concepts
    -Relation between Charge, Current and Energy
    -Boltzmann Transport Equation
    -Method of Moments Solution of Boltzmann's Equation
    -Drift-Diffusion Equations
    -Hydrodynamic Transport Equations
    -Semiconductor Device Design Equations
    -Conductivity Electron, Hole Effective Masses
    -Drift=Diffusion and Thermal Currents
    -Ballistic Transport of Charge Carriers

    C. Homo|Heterogeneous Semiconductor Junction(np|Np) Fundamentals
    -Homogeneous np Semiconductor Junction
    -Homogeneous np Junction with External Bias
    -Quasi Fermi Levels
    -Heterogeneous Semiconductor Junctions Np and Pn
    -Heterogeneous Semiconductor Junction Quasi Fermi Level Splitting

    D. Basic Heterogeneous Bipolar|Bijunction Transistor(HBT)
    -Types of Heterogeneous Bipolar Transistor and Characteristics
    -The Collector and Base Current of a HBT
    -Emitter Hole Current in a HBT
    -Simple DC Equivalent Circuit Model for Heterogeneous Transistor(HBT)

    E. Advanced VBIC, Non-VBIC Heterogeneous Bipolar|
    Bijunction Transistor(HBT) - Large Signal Models
    - Parameters - Equivalent Electrical Circuits
    -The VBIC Model Specification
    -VBIC Homogeneous Junction Bipolar Transistor
    -VBIC Heterogeneous Junction Bipolar Transistor
    -Non-VBIC Heterogeneous Junction Bipolar Transistor

    F. Basic High Electron Mobility Transistor(HEMT)
    -Metal-Semiconductor Junction, Schottky Diode, Ohmic and Rectifying Junction
    -Metal-Semiconductor Field Effect Transistor - Drain Curremt
    -High Electron Mobility Transistor(HEMT) - Potential Wells, Undoped Layer Two Dimensional Electron Gas(2DEG) and Properties

    All hints, suggestions recommendations are welcome. Thanks in advance.

    Sounds like quite the tome!

    You don't seem to be planning to cover normal devices much--most >current-technology s/c devices are somewhere in the gap between sections
    C and D. I'm personally a big user of pHEMTs and SiGe HBTs, but there
    are lots of other things out there, such as CMOS and flash EEPROM.
    That's not intended as a criticism, but it may restrict your market some.

    Things I'd like to read about:

    Device design, including process limitations, e.g. planar vs. epitaxial >vs. HBT bipolars and FETs (A lot of low-noise design is limited by the >Johnson noise of various extrinsic resistances, for instance.)

    Tradeoffs between breakdown voltage, speed, Early voltage, and so on,
    and how HBTs and graded-composition designs can help. Normal RF >transistors have terrible Early voltages, but graded-base SiGe ones can
    be amazing.

    Large-signal behaviour of HBTs, e.g. what happens when you forward-bias >the gate of a pHEMT. (JL and I have a few tricks to share in that area.)
    As a circuit designer, I don't know or care much about semiconductor
    physics except where it provides hints to possible undocumented device behavior, which I can measure and see if it's useful.

    So, such a book should include practical stuff, like the voltage-current-capacitance curves of a part that has typical physics.
    In other words, fill a few pages with equations, then specify a
    specific case, and describe the device in datasheet terms.

    I measure phemts and GaN and SiC for undocumented behavior, like use
    as a diode, or step recovery, or Rds-on, and discover useful stuff. If
    a book has practical stuff, working engineers might buy it.

    Device degradation and damage are important topics but actively
    ignored by the part makers.

    I have (somebody's) book about microwave PCBs, microstrip and
    stripline and such. Some of the cases are pages of equations and pages
    of equations inside of equations. Totally useless.

    In general I'd suggest thinking fairly carefully about who your audience >is. I've been out of academia for 35 years, myself, but BITD folks who >were interested in a deep dive into heterojunctions, 2-d electron gas >devices, and that sort of thing probably knew some quantum mechanics and >semiconductor theory already.

    Good luck with it--it sounds like a noble endeavour.

    Cheers

    Phil Hobbs
    Thanks for the feedback, will definitely keep your suggestions in mind while structuring the chapters.

    --- SoupGate-Win32 v1.05
    * Origin: fsxNet Usenet Gateway (21:1/5)
  • From Mike Monett@21:1/5 to amal banerjee on Mon Aug 8 12:16:49 2022
    amal banerjee <dakupoto@gmail.com> wrote:

    [...]

    Quantum, statistical mechanics and crystal
    structure is nor an issue - my basic training is in physics.

    You physics guys must have brain neurons 1/10 the size of normal people - you have ten times as many:)




    --
    MRM

    --- SoupGate-Win32 v1.05
    * Origin: fsxNet Usenet Gateway (21:1/5)
  • From Phil Hobbs@21:1/5 to Mike Monett on Mon Aug 8 11:01:06 2022
    Mike Monett wrote:
    amal banerjee <dakupoto@gmail.com> wrote:

    [...]

    Quantum, statistical mechanics and crystal
    structure is nor an issue - my basic training is in physics.

    You physics guys must have brain neurons 1/10 the size of normal people - you have ten times as many:)

    Nah, we just gave up chasing girls a bit sooner. ;)

    Cheers

    Phil Hobbs

    --- SoupGate-Win32 v1.05
    * Origin: fsxNet Usenet Gateway (21:1/5)
  • From Phil Hobbs@21:1/5 to All on Mon Aug 8 11:06:19 2022
    whit3rd wrote:
    On Wednesday, August 3, 2022 at 4:18:40 AM UTC-7, daku...@gmail.com wrote:
    Dear All,

    I am planning on writing and publishing a lecture notes style reference book >> on ALL homogeneous and heterogeneous junction semiconductor devices.
    The list includes BJTs, FETs, MOSFETs, HBTs, HEMTs, LEDs, Solar cells,
    VCSELs etc. The main reason for writing this book are :
    1, Very few(miniscule) of the available books have any material on
    heterogeneous junction devices.
    2. Available books fall short on the key details - e.g., the sequence of steps
    involved in creating the crucial energy band diagrams when e,g., two isolated
    oppositely doped semiconductors are brought in contact.
    3. Some semiconductor device books are written by physicists who overlook
    large signal models and equivalent circuit models. Other books written by
    pure electronics people ignore the key quamtum or statistical mechanics that govern semiconductor device operation. No mention of the large signal Angelovc models for HDTs, HEMTS.


    This sounds too broad for a single book, alas.
    As for heterojunction and other devices not covered in the old Sze book's various editions

    <https://www.goodreads.com/book/show/382279.Semiconductor_Devices>

    <snip>

    I really like Sze's second edition--the new co-author apparently tore
    out all the BJT stuff, which is a shame.

    Cheers

    Phil Hobbs


    --
    Dr Philip C D Hobbs
    Principal Consultant
    ElectroOptical Innovations LLC / Hobbs ElectroOptics
    Optics, Electro-optics, Photonics, Analog Electronics
    Briarcliff Manor NY 10510

    http://electrooptical.net
    http://hobbs-eo.com

    --- SoupGate-Win32 v1.05
    * Origin: fsxNet Usenet Gateway (21:1/5)
  • From John Larkin@21:1/5 to All on Mon Aug 8 09:08:27 2022
    On Thu, 04 Aug 2022 15:31:32 -0400, Joe Gwinn <joegwinn@comcast.net>
    wrote:

    On Wed, 3 Aug 2022 04:18:37 -0700 (PDT), amal banerjee
    <dakupoto@gmail.com> wrote:

    Dear All,

    I am planning on writing and publishing a lecture notes style reference book >>on ALL homogeneous and heterogeneous junction semiconductor devices.
    The list includes BJTs, FETs, MOSFETs, HBTs, HEMTs, LEDs, Solar cells, >>VCSELs etc. The main reason for writing this book are :
    1, Very few(miniscule) of the available books have any material on >>heterogeneous junction devices.
    2. Available books fall short on the key details - e.g., the sequence of steps
    involved in creating the crucial energy band diagrams when e,g., two isolated >>oppositely doped semiconductors are brought in contact.
    3. Some semiconductor device books are written by physicists who overlook >>large signal models and equivalent circuit models. Other books written by >>pure electronics people ignore the key quamtum or statistical mechanics that govern semiconductor device operation. No mention of the large signal Angelovc models for HDTs, HEMTS.

    A tentative list of topics is as follow - it will be expanded.

    [snip]

    C. Homo|Heterogeneous Semiconductor Junction(np|Np) Fundamentals >>-Homogeneous np Semiconductor Junction
    -Homogeneous np Junction with External Bias
    -Quasi Fermi Levels
    -Heterogeneous Semiconductor Junctions Np and Pn
    -Heterogeneous Semiconductor Junction Quasi Fermi Level Splitting

    D. Basic Heterogeneous Bipolar|Bijunction Transistor(HBT)
    -Types of Heterogeneous Bipolar Transistor and Characteristics
    -The Collector and Base Current of a HBT
    -Emitter Hole Current in a HBT
    -Simple DC Equivalent Circuit Model for Heterogeneous Transistor(HBT)

    E. Advanced VBIC, Non-VBIC Heterogeneous Bipolar|
    Bijunction Transistor(HBT) - Large Signal Models
    - Parameters - Equivalent Electrical Circuits
    -The VBIC Model Specification
    -VBIC Homogeneous Junction Bipolar Transistor
    -VBIC Heterogeneous Junction Bipolar Transistor
    -Non-VBIC Heterogeneous Junction Bipolar Transistor

    F. Basic High Electron Mobility Transistor(HEMT)
    -Metal-Semiconductor Junction, Schottky Diode, Ohmic and Rectifying Junction >>-Metal-Semiconductor Field Effect Transistor - Drain Curremt
    -High Electron Mobility Transistor(HEMT) - Potential Wells, Undoped Layer Two Dimensional Electron Gas(2DEG) and Properties

    All hints, suggestions recommendations are welcome. Thanks in advance.

    What is often missing is a discussion of what drives noise generation
    in the various transistor types. This kind of data is essential in
    many practical low-noise applications, and it's useful to know how the >various transistor types compare, and how the noise scales with device >details.

    There are two major kinds of noise to addressed, being flat-band (the
    noise floor), and flicker noise at low offset frequencies. These
    differ in their physical causes.

    Both current and voltage noise must be considered. Spurs are ignored
    here.

    The noise floor is typically Gaussian, and often arises from thermal
    and shot-noise sources.

    The sources of flicker noise are many and mostly unknown, but cleaner >material and bigger device volume both reduce the flicker level.
    Flicker noise follows a sum of kn/f^n terms formula, where n is an
    integer from zero to three or four.

    One mistake one often sees is that the offset-frequency location where
    the Flicker noise curve crosses the noise floor is cited as defining
    the flicker noise. The problem is that variation in noise floor level
    will change this intersection, even though the flicker noise is
    unchanged, so it's best to tabulate the coefficients kn of the kn/f^n
    terms.

    Joe Gwinn

    Most phemt type parts are specified for RF use. So one gets no clue,
    from data sheets, about actual gate currents, Rds-on, breakdown
    voltages, diode behavior, none of the good stuff.

    You are very lucky to get any DC curves. "Adjust the gate bias until
    it works."

    More people would buy the book if it includes this kind of stuff. How
    about sidebars about device details and quirks? Write a classic.



    --

    John Larkin Highland Technology, Inc trk

    The cork popped merrily, and Lord Peter rose to his feet.
    "Bunter", he said, "I give you a toast. The triumph of Instinct over Reason"

    --- SoupGate-Win32 v1.05
    * Origin: fsxNet Usenet Gateway (21:1/5)
  • From Phil Hobbs@21:1/5 to John Larkin on Mon Aug 8 12:32:55 2022
    John Larkin wrote:
    On Thu, 04 Aug 2022 15:31:32 -0400, Joe Gwinn <joegwinn@comcast.net>
    wrote:

    On Wed, 3 Aug 2022 04:18:37 -0700 (PDT), amal banerjee
    <dakupoto@gmail.com> wrote:

    Dear All,

    I am planning on writing and publishing a lecture notes style reference book
    on ALL homogeneous and heterogeneous junction semiconductor devices.
    The list includes BJTs, FETs, MOSFETs, HBTs, HEMTs, LEDs, Solar cells,
    VCSELs etc. The main reason for writing this book are :
    1, Very few(miniscule) of the available books have any material on
    heterogeneous junction devices.
    2. Available books fall short on the key details - e.g., the sequence of steps
    involved in creating the crucial energy band diagrams when e,g., two isolated
    oppositely doped semiconductors are brought in contact.
    3. Some semiconductor device books are written by physicists who overlook >>> large signal models and equivalent circuit models. Other books written by >>> pure electronics people ignore the key quamtum or statistical mechanics that govern semiconductor device operation. No mention of the large signal Angelovc models for HDTs, HEMTS.

    A tentative list of topics is as follow - it will be expanded.

    [snip]

    C. Homo|Heterogeneous Semiconductor Junction(np|Np) Fundamentals
    -Homogeneous np Semiconductor Junction
    -Homogeneous np Junction with External Bias
    -Quasi Fermi Levels
    -Heterogeneous Semiconductor Junctions Np and Pn
    -Heterogeneous Semiconductor Junction Quasi Fermi Level Splitting

    D. Basic Heterogeneous Bipolar|Bijunction Transistor(HBT)
    -Types of Heterogeneous Bipolar Transistor and Characteristics
    -The Collector and Base Current of a HBT
    -Emitter Hole Current in a HBT
    -Simple DC Equivalent Circuit Model for Heterogeneous Transistor(HBT)

    E. Advanced VBIC, Non-VBIC Heterogeneous Bipolar|
    Bijunction Transistor(HBT) - Large Signal Models
    - Parameters - Equivalent Electrical Circuits
    -The VBIC Model Specification
    -VBIC Homogeneous Junction Bipolar Transistor
    -VBIC Heterogeneous Junction Bipolar Transistor
    -Non-VBIC Heterogeneous Junction Bipolar Transistor

    F. Basic High Electron Mobility Transistor(HEMT)
    -Metal-Semiconductor Junction, Schottky Diode, Ohmic and Rectifying Junction
    -Metal-Semiconductor Field Effect Transistor - Drain Curremt
    -High Electron Mobility Transistor(HEMT) - Potential Wells, Undoped Layer Two Dimensional Electron Gas(2DEG) and Properties

    All hints, suggestions recommendations are welcome. Thanks in advance.

    What is often missing is a discussion of what drives noise generation
    in the various transistor types. This kind of data is essential in
    many practical low-noise applications, and it's useful to know how the
    various transistor types compare, and how the noise scales with device
    details.

    There are two major kinds of noise to addressed, being flat-band (the
    noise floor), and flicker noise at low offset frequencies. These
    differ in their physical causes.

    Both current and voltage noise must be considered. Spurs are ignored
    here.

    The noise floor is typically Gaussian, and often arises from thermal
    and shot-noise sources.

    The sources of flicker noise are many and mostly unknown, but cleaner
    material and bigger device volume both reduce the flicker level.
    Flicker noise follows a sum of kn/f^n terms formula, where n is an
    integer from zero to three or four.

    One mistake one often sees is that the offset-frequency location where
    the Flicker noise curve crosses the noise floor is cited as defining
    the flicker noise. The problem is that variation in noise floor level
    will change this intersection, even though the flicker noise is
    unchanged, so it's best to tabulate the coefficients kn of the kn/f^n
    terms.

    Joe Gwinn

    Most phemt type parts are specified for RF use. So one gets no clue,
    from data sheets, about actual gate currents, Rds-on, breakdown
    voltages, diode behavior, none of the good stuff.

    You are very lucky to get any DC curves. "Adjust the gate bias until
    it works."

    More people would buy the book if it includes this kind of stuff. How
    about sidebars about device details and quirks? Write a classic.

    A sidebar about stabilizing them in built-up circuits would be pretty
    cool too. Specifically, the Murata BLM18- and BLM15BA050 and -100 (5
    and 10 ohms, in 0603 and 0402 sizes) will turn a magic but unusably
    unstable 14 GHz pHEMT or 40 GHz SiGe BJT into a magic and super stable
    2-GHz.

    pHEMT+bead gets you stuff like 0.3 nV 1-Hz noise in the flatband and a transconductance within a factor of 2 of the thermodynamic limit.

    SiGe BJT + bead gets you almost equally low noise plus a beta of 250 and
    an Early voltage > 250V, so you can get a voltage gain of 50 or more in
    one stage.

    I'm just finishing up a bootstrapped preamp for a 3000-pF SiPM array
    that uses a Mini-Circuits SAV-331+ depletion pHEMT. At 14 mA, its
    output impedance is about 3 ohms, which is 10x lower than the closest
    JFET. Its 1/f corner is 20 MHz or so, but it's still quieter than the
    JFET (0.8 nV/sqrt(Hz)) in the 7 MHz circuit bandwidth.

    Cheers

    Phil Hobbs

    --
    Dr Philip C D Hobbs
    Principal Consultant
    ElectroOptical Innovations LLC / Hobbs ElectroOptics
    Optics, Electro-optics, Photonics, Analog Electronics
    Briarcliff Manor NY 10510

    http://electrooptical.net
    http://hobbs-eo.com

    --- SoupGate-Win32 v1.05
    * Origin: fsxNet Usenet Gateway (21:1/5)
  • From DecadentLinuxUserNumeroUno@decadenc@21:1/5 to Phil Hobbs on Mon Aug 8 18:01:05 2022
    Phil Hobbs <pcdhSpamMeSenseless@electrooptical.net> wrote in news:48d6402c-fcc7-917d-38bc-421f5bf4db08@electrooptical.net:

    John Larkin wrote:
    On Thu, 04 Aug 2022 15:31:32 -0400, Joe Gwinn
    <joegwinn@comcast.net> wrote:

    On Wed, 3 Aug 2022 04:18:37 -0700 (PDT), amal banerjee
    <dakupoto@gmail.com> wrote:

    Dear All,

    I am planning on writing and publishing a lecture notes style
    reference book on ALL homogeneous and heterogeneous junction
    semiconductor devices. The list includes BJTs, FETs, MOSFETs,
    HBTs, HEMTs, LEDs, Solar cells, VCSELs etc. The main reason for
    writing this book are : 1, Very few(miniscule) of the available
    books have any material on heterogeneous junction devices.
    2. Available books fall short on the key details - e.g., the
    sequence of steps involved in creating the crucial energy band
    diagrams when e,g., two isolated oppositely doped
    semiconductors are brought in contact. 3. Some semiconductor
    device books are written by physicists who overlook large
    signal models and equivalent circuit models. Other books
    written by pure electronics people ignore the key quamtum or
    statistical mechanics that govern semiconductor device
    operation. No mention of the large signal Angelovc models for
    HDTs, HEMTS.

    A tentative list of topics is as follow - it will be expanded.

    [snip]

    C. Homo|Heterogeneous Semiconductor Junction(np|Np)
    Fundamentals -Homogeneous np Semiconductor Junction
    -Homogeneous np Junction with External Bias
    -Quasi Fermi Levels
    -Heterogeneous Semiconductor Junctions Np and Pn
    -Heterogeneous Semiconductor Junction Quasi Fermi Level
    Splitting

    D. Basic Heterogeneous Bipolar|Bijunction Transistor(HBT)
    -Types of Heterogeneous Bipolar Transistor and Characteristics
    -The Collector and Base Current of a HBT
    -Emitter Hole Current in a HBT
    -Simple DC Equivalent Circuit Model for Heterogeneous
    Transistor(HBT)

    E. Advanced VBIC, Non-VBIC Heterogeneous Bipolar|
    Bijunction Transistor(HBT) - Large Signal Models
    - Parameters - Equivalent Electrical Circuits
    -The VBIC Model Specification
    -VBIC Homogeneous Junction Bipolar Transistor
    -VBIC Heterogeneous Junction Bipolar Transistor
    -Non-VBIC Heterogeneous Junction Bipolar Transistor

    F. Basic High Electron Mobility Transistor(HEMT)
    -Metal-Semiconductor Junction, Schottky Diode, Ohmic and
    Rectifying Junction -Metal-Semiconductor Field Effect
    Transistor - Drain Curremt -High Electron Mobility
    Transistor(HEMT) - Potential Wells, Undoped Layer Two
    Dimensional Electron Gas(2DEG) and Properties

    All hints, suggestions recommendations are welcome. Thanks in
    advance.

    What is often missing is a discussion of what drives noise
    generation in the various transistor types. This kind of data
    is essential in many practical low-noise applications, and it's
    useful to know how the various transistor types compare, and how
    the noise scales with device details.

    There are two major kinds of noise to addressed, being flat-band
    (the noise floor), and flicker noise at low offset frequencies.
    These differ in their physical causes.

    Both current and voltage noise must be considered. Spurs are
    ignored here.

    The noise floor is typically Gaussian, and often arises from
    thermal and shot-noise sources.

    The sources of flicker noise are many and mostly unknown, but
    cleaner material and bigger device volume both reduce the
    flicker level. Flicker noise follows a sum of kn/f^n terms
    formula, where n is an integer from zero to three or four.

    One mistake one often sees is that the offset-frequency location
    where the Flicker noise curve crosses the noise floor is cited
    as defining the flicker noise. The problem is that variation in
    noise floor level will change this intersection, even though the
    flicker noise is unchanged, so it's best to tabulate the
    coefficients kn of the kn/f^n terms.

    Joe Gwinn

    Most phemt type parts are specified for RF use. So one gets no
    clue, from data sheets, about actual gate currents, Rds-on,
    breakdown voltages, diode behavior, none of the good stuff.

    You are very lucky to get any DC curves. "Adjust the gate bias
    until it works."

    More people would buy the book if it includes this kind of stuff.
    How about sidebars about device details and quirks? Write a
    classic.

    A sidebar about stabilizing them in built-up circuits would be
    pretty cool too. Specifically, the Murata BLM18- and BLM15BA050
    and -100 (5 and 10 ohms, in 0603 and 0402 sizes) will turn a magic
    but unusably unstable 14 GHz pHEMT or 40 GHz SiGe BJT into a magic
    and super stable 2-GHz.

    pHEMT+bead gets you stuff like 0.3 nV 1-Hz noise in the flatband
    and a transconductance within a factor of 2 of the thermodynamic
    limit.

    SiGe BJT + bead gets you almost equally low noise plus a beta of
    250 and an Early voltage > 250V, so you can get a voltage gain of
    50 or more in one stage.

    I'm just finishing up a bootstrapped preamp for a 3000-pF SiPM
    array that uses a Mini-Circuits SAV-331+ depletion pHEMT. At 14
    mA, its output impedance is about 3 ohms, which is 10x lower than
    the closest JFET. Its 1/f corner is 20 MHz or so, but it's still
    quieter than the JFET (0.8 nV/sqrt(Hz)) in the 7 MHz circuit
    bandwidth.

    Cheers

    Phil Hobbs

    I think you have more on the ball than anyone else in this group,
    Mr.(Dr.) Hobbs.

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  • From John Larkin@21:1/5 to pcdhSpamMeSenseless@electrooptical. on Mon Aug 8 11:56:01 2022
    On Mon, 8 Aug 2022 12:32:55 -0400, Phil Hobbs <pcdhSpamMeSenseless@electrooptical.net> wrote:

    John Larkin wrote:
    On Thu, 04 Aug 2022 15:31:32 -0400, Joe Gwinn <joegwinn@comcast.net>
    wrote:

    On Wed, 3 Aug 2022 04:18:37 -0700 (PDT), amal banerjee
    <dakupoto@gmail.com> wrote:

    Dear All,

    I am planning on writing and publishing a lecture notes style reference book
    on ALL homogeneous and heterogeneous junction semiconductor devices.
    The list includes BJTs, FETs, MOSFETs, HBTs, HEMTs, LEDs, Solar cells, >>>> VCSELs etc. The main reason for writing this book are :
    1, Very few(miniscule) of the available books have any material on
    heterogeneous junction devices.
    2. Available books fall short on the key details - e.g., the sequence of steps
    involved in creating the crucial energy band diagrams when e,g., two isolated
    oppositely doped semiconductors are brought in contact.
    3. Some semiconductor device books are written by physicists who overlook >>>> large signal models and equivalent circuit models. Other books written by >>>> pure electronics people ignore the key quamtum or statistical mechanics that govern semiconductor device operation. No mention of the large signal Angelovc models for HDTs, HEMTS.

    A tentative list of topics is as follow - it will be expanded.

    [snip]

    C. Homo|Heterogeneous Semiconductor Junction(np|Np) Fundamentals
    -Homogeneous np Semiconductor Junction
    -Homogeneous np Junction with External Bias
    -Quasi Fermi Levels
    -Heterogeneous Semiconductor Junctions Np and Pn
    -Heterogeneous Semiconductor Junction Quasi Fermi Level Splitting

    D. Basic Heterogeneous Bipolar|Bijunction Transistor(HBT)
    -Types of Heterogeneous Bipolar Transistor and Characteristics
    -The Collector and Base Current of a HBT
    -Emitter Hole Current in a HBT
    -Simple DC Equivalent Circuit Model for Heterogeneous Transistor(HBT)

    E. Advanced VBIC, Non-VBIC Heterogeneous Bipolar|
    Bijunction Transistor(HBT) - Large Signal Models
    - Parameters - Equivalent Electrical Circuits
    -The VBIC Model Specification
    -VBIC Homogeneous Junction Bipolar Transistor
    -VBIC Heterogeneous Junction Bipolar Transistor
    -Non-VBIC Heterogeneous Junction Bipolar Transistor

    F. Basic High Electron Mobility Transistor(HEMT)
    -Metal-Semiconductor Junction, Schottky Diode, Ohmic and Rectifying Junction
    -Metal-Semiconductor Field Effect Transistor - Drain Curremt
    -High Electron Mobility Transistor(HEMT) - Potential Wells, Undoped Layer Two Dimensional Electron Gas(2DEG) and Properties

    All hints, suggestions recommendations are welcome. Thanks in advance. >>>
    What is often missing is a discussion of what drives noise generation
    in the various transistor types. This kind of data is essential in
    many practical low-noise applications, and it's useful to know how the
    various transistor types compare, and how the noise scales with device
    details.

    There are two major kinds of noise to addressed, being flat-band (the
    noise floor), and flicker noise at low offset frequencies. These
    differ in their physical causes.

    Both current and voltage noise must be considered. Spurs are ignored
    here.

    The noise floor is typically Gaussian, and often arises from thermal
    and shot-noise sources.

    The sources of flicker noise are many and mostly unknown, but cleaner
    material and bigger device volume both reduce the flicker level.
    Flicker noise follows a sum of kn/f^n terms formula, where n is an
    integer from zero to three or four.

    One mistake one often sees is that the offset-frequency location where
    the Flicker noise curve crosses the noise floor is cited as defining
    the flicker noise. The problem is that variation in noise floor level
    will change this intersection, even though the flicker noise is
    unchanged, so it's best to tabulate the coefficients kn of the kn/f^n
    terms.

    Joe Gwinn

    Most phemt type parts are specified for RF use. So one gets no clue,
    from data sheets, about actual gate currents, Rds-on, breakdown
    voltages, diode behavior, none of the good stuff.

    You are very lucky to get any DC curves. "Adjust the gate bias until
    it works."

    More people would buy the book if it includes this kind of stuff. How
    about sidebars about device details and quirks? Write a classic.

    A sidebar about stabilizing them in built-up circuits would be pretty
    cool too. Specifically, the Murata BLM18- and BLM15BA050 and -100 (5
    and 10 ohms, in 0603 and 0402 sizes) will turn a magic but unusably
    unstable 14 GHz pHEMT or 40 GHz SiGe BJT into a magic and super stable
    2-GHz.

    pHEMT+bead gets you stuff like 0.3 nV 1-Hz noise in the flatband and a >transconductance within a factor of 2 of the thermodynamic limit.

    SiGe BJT + bead gets you almost equally low noise plus a beta of 250 and
    an Early voltage > 250V, so you can get a voltage gain of 50 or more in
    one stage.

    I'm just finishing up a bootstrapped preamp for a 3000-pF SiPM array
    that uses a Mini-Circuits SAV-331+ depletion pHEMT. At 14 mA, its
    output impedance is about 3 ohms, which is 10x lower than the closest
    JFET. Its 1/f corner is 20 MHz or so, but it's still quieter than the
    JFET (0.8 nV/sqrt(Hz)) in the 7 MHz circuit bandwidth.

    I like the enhancement parts like SAV541 for switching, like
    discharging timing ramps, or as pulse generator output stages. (GaN is
    better for slower, higher voltage apps.)


    Cheers

    Phil Hobbs

    You and I could write little sidebar boxes for Amal's book.

    --

    John Larkin Highland Technology, Inc trk

    The cork popped merrily, and Lord Peter rose to his feet.
    "Bunter", he said, "I give you a toast. The triumph of Instinct over Reason"

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