things like SiCl4 gas might notice more nucleation sites if some of the things thiey were crystallizing on had more nucleation sites, nucleation sites that might be compatible with semiconductor process technology CVD coulkd be like 1/1000 part SICl3F or
SiCl2F2 CVD gases, when these were right at the wafer surfaces they might make siCl4 right next to them extra interested in crystallization while having harmless SI deposition if the SiCl3F reacts with the wafer itself.

Customized plasmonics (electron hole pair location and geometry engineering) could cause more, better, optimized production of nucleation sites at a growing semiconductor (or MEMS) wafer; beaming things at the wafer that cause plasmonics geometries at
its surface could do this, beneath or side of wafer solitons, dissipative solitons,

mass quantum spin observations (like planar regions of entire spin polarized thing resolvability resolution) could, like the quantum camera described at New scientist, cause entire surfaces to have a micropatterned electric charge on them, that
micropatterened electric charge could be used to produce nucleation sites to physically patternize crystal growth at the planar semiconductor wafer surface, as well as create the possibility of customized engineered plasmonic geometries right at the
wafer surface which could be used to cause more rapid deposition of CVD gas constituents, rapidifying semiconductor process manufacturing, noting that doubling this velocity could cause the number of semiconductors a fab produces to double, heightening
productivity, profitability, and the variety of different kinds of semiconductors that can be produced; As an actual technology, something like a 300 mm wafer with a light source, where the light source, is divided into two quantum entangled (linked)
beams, or actually planes, basically planar arrays of light, and one of the beams, that is planar arrays of light, travels to a quantum camera light sensor array that is numerous powers of two higher resolution that the feature size of the features being
made at the wafer having its semiconductor features produced, like a (billion times a billion feature, or 10 billion feature times 10 billion feature ) quintillion (10^18) or larger number of light sensors per 300 mm wafer chip, then whenever one of the
photons meets the surface of the wafer its electrical charge modifying ability depends on if the photon at the quintillion feature chip has had its spin determined with light detection events, Note there is something that is new to me at the engineering
processes, the photon meeting the feature could be doing numerous different things: it could be making a nucleation site, causing growth, it could be causing some kind of mathematically meaningful spin variant effect, fractional charge, which then
effects atomic bond formation (crystal growth), it could be causing a moment of reduced reactivity, causing, relatively, other things near it to be growing higher faster, The mathematically meaningful fractional charge variation, Note that just one
photon doing something this could be an accumulative number of spin-effect pulses build up to one entire atoms change (crystal deposition, crystal subratacted) amount, (what if it was a few hundred photon spin observation moments to do each atom
attaching to a crystal, and a over a quadrillion (LED laser ordinary) light pulses per second but perhaps not two atoms amount, so actual amounts of atom gowth at the crystal growth is directable; the adjustable growth rate for finer, greater
repeatability of features of action at this makes engineerable feature fineness, homogeneity of crystallization)Noting the entire wafer at the semiconductor fab being manufactured: then if the kind of custom made, quintillion feature (billion feature
rows, billion feature columns) photonic spin detector chip is doing this quantum camera thing at a couple of orders of magnitude higher physical resolution that than the quadrillion (or higher) actual feature chip being produced then that is a new to me
semiconductor feature producing wafer technology; feature size, fineness, repeatability, possibly composition (sort of liked doped-ness where beyond the stoichiometry of the chemical vapor deposition gas causing the doping variety of the layer or feature
the adjustability of photon spin at several powers of two higher spatial resolution, quadrillions of times per second from the quantum camera causes something like crystal atom at atom growth with a halftone-dot like predictability of dopant spatial
geometry, homegenity, or possibly even a new kind of feature, depth (like say you put a 40% halftone screen dopant layer of atoms on a 20% dopant layer, and you might even be able to use the spin effects to change dopant element ratio like 40:Ge:40:Ga:
10N:10:P to 90Ga:10:N at a cumulative layer thickness, even at a particular line width)

it could also be a quintillion feature photon spin modifying photon sensing chip, doing the quantum camera thing at semiconductor process manufacture production of semiconductors doing quadrillions of photon cycles of spin observation responses per
second could actually write features at a quintillion feature chip

Notably though, can you actually aim light at a semiconductor wafer while making it? Well, the photolithography template is a light aiming thing, and there is likely published material on using a lasers to do things on chip features right on the wafer
while it is being manufactured, so this brings up, can you illuminate a wafer, then fill the chamber with CVD gas, then have the gas react with the wafers surface based ont he light you just illuminated it with; some spin polarized gases stay spin
polarized for 15 minutes so that is supportive, At some wavelengths, the pure crystals of wafers could be treated as lenses for lasers that shine through to the wafer treatment surface from underneath, at some geometries of shining a laser, or a planar
array of spin polarized light (a thing that is different than a banch of parallel lasers, or also different, but possibly producible with a diffration grating and a laser making an array of points), having the light illuminate the wafer obliquely from
the side could be done at less than a millimeter above the surface, minimizing beamspread from the CVD gas having a refractive index; also possible is that noting CVD gas has a refractive index, at some applications, different concentrations of CVD gas
could be used that have different refractive indexes, so if crystal growth velocity is adjustable with photonic and spin photonic, and reynolds number gas swirl technology that vary surface charge as well as actual CVD gas concentration then it might be
possible to grow semiconductors just as well even if CVD gas concentration varies across an order of magnitude, giving an order of magnitude greater transparency and light spatial, intensity, coherence, and other attribute nondivergence

I do not know, but it is possible that if you spin polarize something its emissions and absorption spectra are different so if you shine two lights at a material, one that changes the spin of the atoms at the material, and the other that gives the
material a photoelectric effect charge boost that then causes chemical reactivity, that you can change the kinds of things the material will react with, when it will react, if that is

It might be possible to do a raster or parallel version of quantum camera spin customization of spatial things at making semiconductors as well, where a mere billion feature quantum camera spin detector and actualizing photosensor chip, used repeatedly
as scanned, at a 10 billion times ten billion feature 300 mm wafer with the features being built on it is used, possibly with photonic spin observations being made quintillions of times a second (noting picosecond lasers exist, and some kind of picohertz
elecronics exist to drive them)

Making quantum cameras with 100 picometer resolution or finer causes finer feature size at the actual size of the semiconductor device the fab is making to experience spatial spin modifications (quantum camera), geometry, and possibly plasmonic feature
stimulation at the semiconductor crystal surface five powers of two eentsier than than the features being produced, or optimally, makes creating eentsier feature sizes possible; I read 3 nanometer semiconductor size feature are being scaled up, 1
nannometers is this possible now noting 1 nanometer technology could be used if you are willing to make a few hundred and keep some, or possibly keep a couple at 300 picometer technology; you could make 1 nanometer or 300 picometer feature sized
photodetectors at a 300 nm wafer, with three or 8 times the resolution of a 3nm process wafer, or imaginably, something like very custom 100 picometer feature UV laser process produced chip, where you make a few thousand and get one you can use, but its
ability to resolve and instantiate photon spin polarization and other observation things (3, 800, 400, 200, 100 picometer) five powers of two tinier than a 3 nanometer process chip causes even greater tininess, feature finess, size, shape making, and
repeatability at the observed integrated circuit being made at the fab; not only are tinier features possible, but faster production of the 3 nanometer size feature semicodnuctors is also possible heightening fab productivity

There are UV emitting quantum dots, it is imaginable that these, perhaps just from being made an order of magnitude different sized, at 300 picometer rather than 2.5 nanometer, could make higher wavelength radiation

It is possible that at light there is some kind of thing where if you know (measure or make) some things then you know, or tend to not know others. It is possible that if you know something like spin (up/down), or polarization (linear/angle, circular,
other) of light you might know more, or possibly less, about its wavelength. It might be possible to make a light emitter for semiconductor manufacturing (wavelenth feature size new technology) where perhaps you do not actually know where between UV and
visible its wavelength is, but as a result of observing some other thing like spin, polarization, evanescence presence or distance, source geometry/simultaneity thing (kind of like double slits possibly having a wavelength that is definably determinably
at some range because if the two slits are wider apart than some number of wavelengths then the ~~~~ per nanometer are some particular size range, so if you use slits of some kind to look at white light photons you know nothing about, with some spacing
of slit and see it then you are “certain” knowledge of-producing, at least some energy at an energy regime of a certain ~~~~~ size. Notably, at something like the quantum camera, observing it at the light sensor might make it so energy of just that ~
~~~ size has an actual amount of ergs at the other thing the quantum entangled (linked) photons are shining on; so instead of light going on a chip (camera sensor at New sceintist, or described here as the actual wafer surface of a semiconductor being
made) and a figurine, you put light on a chip and a thing (rather than a figurine) from made up of a bunch of slits, then you look at what comes from the bunch of slits, and that means that at the chip (camera or the thing being made at a fab) photons of
that ~~~~ size and ergs are, at some quantity, being deposited; noting picosecond lasers exist, a person doing things to the surface of semiconductor, like one being manufactured, could do this slits make energy ~~~~~ size and ergs thing trillions of
times per second, causing accumulative change from the energy change at a crystal being cumulatively deposited or even etched; the nifty thing is that you have illuminated the wafer you are making with wide spectrum white illumination, and just
immanentizing the part that is far enough at the far UV to make features that are tinier than 2019 light size and photolithography feature size, building up something billions or trillions of times per second, at what, side-observationally (without
knowing the actual wavelength), have to be, really high frequency waves causes semiconductor features to be built up or etched out

Using a quintillion optical sensor wafer to cause spins to be defined, or undefined at another surface, notably the surface of semiconductor manufacturing process wafer being created, makes it so that the photons that reach the wafer being made are more
chemically active, more electrically active, kept from causing charge, so making their neighbors show up up more, or, notably are at a frequency blend which contains, at least, if not more, but at least, the frequency the quantum camera spin topology
plane making thing can respond to, then these things can be used to make features at semiconductors, kind of like doing AND, OR, NOT, and possibly XOR of light doing thing at a feature sized spot on a quadrillion feature sized wafer being observed into
varied surface charge topology with a quintiliion feature sized photodetecting quantum camera

Supersaturation causes more crystals to grow with less chronological moments, is there a feature size, fineness, regularity, and repeatability preserving way to supersaturate (more CVD gas right there at the wafer surface) a CVD atmosphere right near a
wafer, from causing atoms to be stimulated to bunch up, perhaps with solitons (like dissipative solitons), photons, some ambient, all wafer or just surface wave with less than 100 picometer wavelength, but nonspecific location (like illuminating, but not
etching, a wafer with UV), perhaps at a chronological varying dose, like some picometer wavelength UV at 100 billion cycles per second to do 10 picometer bunch up layers at the wafer surface (lisening to a ruler wiggle, a 10 cm ruler might sound like
acoustic 100 hz, so a 100 billionth of a meter wiggle might be a 10 picometer sized length wiggle, possibly as a standing wave, which could be beneficial as it stays at the preferred wafer location), the 100 billion cycle per second waves could actually
be be beamed from beneath the wafer (or from the side), and some wafer materials might even have findable bandpass layers that are extra transmissive of various wavelengths above 100 billion cycles per second; There are industrial process femtosecond
lasers so making the waves is a known technology.

--- SoupGate-Win32 v1.05
* Origin: fsxNet Usenet Gateway (21:1/5)