• DRAM circuits

    From tomar.bhawna@gmail.com@21:1/5 to All on Fri May 27 06:49:10 2016
    shouldn't DRAM writes be faster than reads?

    Answer to this lies mostly in the 1T cell charging the capacitor. Since the device is for density sake min size. As capacitor node reaches final value the MOS device Vds droops and it enters triode region. It takes longer to store the desired final value
    on storage node.

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