Simply printing high-performance perovskite-based transistors

Date:
March 25, 2022
Source:
Pohang University of Science & Technology (POSTECH)
Summary:
A research team develops high performing p-type transistor using
perovskite. Solution-processed metal halide perovskite transistors
can now be printed.



FULL STORY ==========================================================================
The printing press has contributed immensely to the advancement
of humankind by elevating politics, economy, and culture to higher
grounds. Today, it goes beyond simply printing books or documents, and is expanding its influence to the realm of cutting-edge technology. Most
notably, high-performance components in various smart devices have
been successfully printed and have attracted much attention. And now,
a technology to print perovskite-based devices - - considered a challenge
until now -- has been proposed.


==========================================================================
A POSTECH research team led by Professor Yong-Young Noh and
Ph.D. candidates Ao Liu and Huihui Zhu (Department of Chemical
Engineering), in collaboration with Professor Myung-Gil Kim (School of
Advanced Materials Science and Engineering) of Sungkyunkwan University,
has improved the performance of a p-type semiconductortransistor using inorganic metal halide perovskite. One of the biggest advantages of
the new technology is that it enables solution-processed perovskite
transistors to be simply printed as semiconductor-like circuits.

Perovskite-based transistors control the current by combining p-type semiconductors that exhibit hole mobilities with n-type semiconductors.

Compared to n-type semiconductors that have been actively studied so far, fabricating high-performance p-type semiconductors has been a challenge.

Many researchers have tried to utilize perovskite in the p-type
semiconductor for its excellent electrical conductivity, but its
poor electrical performance and reproducibility have hindered commercialization.

To overcome this issue, the researchers used the modified inorganic metal halidecaesium tin triiodide (CsSnI3) to develop the p-type perovskite semiconductor and fabricated the high-performance transistor based
on this.

This transistor exhibits high hole mobility of 50cm2V-1s-1and higher and
the current ratio of more than 108, and recorded the highest performance
among the perovskite semiconductor transistors that have been developed
so far.

By making the material into a solution, the researchers succeeded in
simply printing the p-type semiconductor transistor as if printing a
document. This method is not only convenient but also cost-effective,
which can lead to the commercialization of perovskite devices in the
future.

"The newly developed semiconductor material and transistor can be widely applicable as logic circuits in high-end displays and in wearable
electronic devices, and also be used in stacked electronic circuits
and optoelectronic devices by stacking them vertically with silicon semiconductors," explained Professor Yong-Young Noh on the significance
of the study.

This study was conducted with the support from the Mid-Career Researcher Program, Creative Materials Discovery Program, Next-generation
Intelligence- Type Semiconductor Development Program, and the Basic
Research Lab Program of the National Research Foundation of Korea,
and from Samsung Display Corporation.


========================================================================== Story Source: Materials provided by Pohang_University_of_Science_&_Technology_(POSTECH).

Note: Content may be edited for style and length.


========================================================================== Journal Reference:
1. Ao Liu, Huihui Zhu, Sai Bai, Youjin Reo, Taoyu Zou, Myung-Gil
Kim, Yong-
Young Noh. High-performance inorganic metal halide perovskite
transistors. Nature Electronics, 2022; 5 (2): 78 DOI:
10.1038/s41928-022- 00712-2 ==========================================================================

Link to news story: https://www.sciencedaily.com/releases/2022/03/220325093915.htm

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